Contact resistance of focused ion beam deposited platinum and tungsten films to silicon
Identifieur interne : 001796 ( Main/Exploration ); précédent : 001795; suivant : 001797Contact resistance of focused ion beam deposited platinum and tungsten films to silicon
Auteurs : Anthony J. Demarco [États-Unis] ; John Melngailis [États-Unis]Source :
- Journal of vacuum science & technology. B. Microelectronics and nanometer structures. Processing, measurement and phenomena [ 1071-1023 ] ; 2001-11.
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Abstract
Focused ion beam (FIB) techniques are currently being used in industry for circuit repair and rewiring in the prototyping stage. The ability to deposit a conductor directly onto silicon with a good electrical contact using the FIB methods would increase the utility of this technique in repair and circuit function diagnosis. In addition, FIB made contacts may be encountered in microelectromechanical devices (MEMS), and, when combined with FIB direct implantation, may permit local fabrication of transistors [e.g., bipolars and junction field-effect transistors (JFETs)] without conventional, planar techniques. The contact resistance of FIB-deposited platinum and tungsten onto variously doped silicon was investigated. FIB-metal contact to n+ and p+Si was found to be ohmic after a sintering at 400°C for 20 min in H2N2 forming gas. Individual contacts were found to vary widely in contact resistance, likely due to nonuniformity in the deposition process. Contacts to lightly doped Si were nonohmic. The contact resistance for Pt contacts to heavily doped Si was found to be on the order of 10-2Ωcm2, and the contact resistance for W contacts on the order of 10-3Ωcm2. It is believed that the sintering leads to formation of Pt2Si and PtSi silicides, which may interfere with the metal/semiconductor tunneling contact. Platinum silicides form around 300°C, at the metal to silicon interface for the platinum contacts. Tungsten silicide, WSi2, forms at 650°C and is not believed to play a part in the tungsten contact dynamics. © 2001 American Vacuum Society.
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Demarco</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>University of Maryland Department of Electrical and Computer Engineering, University of Maryland, Rm 1202U, Energy Research Facility, College Park, Maryland 20742</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Maryland</region></placeName><wicri:cityArea>University of Maryland Department of Electrical and Computer Engineering, University of Maryland, Rm 1202U, Energy Research Facility, College Park</wicri:cityArea></affiliation></author><author><name sortKey="Melngailis, John" sort="Melngailis, John" uniqKey="Melngailis J" first="John" last="Melngailis">John Melngailis</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>University of Maryland Department of Electrical and Computer Engineering, University of Maryland, Rm 1202U, Energy Research Facility, College Park, Maryland 20742</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Maryland</region></placeName><wicri:cityArea>University of Maryland Department of Electrical and Computer Engineering, University of Maryland, Rm 1202U, Energy Research Facility, College Park</wicri:cityArea></affiliation></author></titleStmt><publicationStmt><idno type="wicri:source">INIST</idno><idno type="inist">02-0019642</idno><date when="2001-11">2001-11</date><idno type="stanalyst">PASCAL 02-0019642 AIP</idno><idno type="RBID">Pascal:02-0019642</idno><idno type="wicri:Area/PascalFrancis/Corpus">000070</idno><idno type="wicri:Area/PascalFrancis/Curation">000004</idno><idno type="wicri:Area/PascalFrancis/Checkpoint">000069</idno><idno type="wicri:explorRef" wicri:stream="PascalFrancis" wicri:step="Checkpoint">000069</idno><idno type="wicri:doubleKey">1071-1023:2001:Demarco A:contact:resistance:of</idno><idno type="wicri:Area/Main/Merge">001835</idno><idno type="wicri:Area/Main/Curation">001796</idno><idno type="wicri:Area/Main/Exploration">001796</idno></publicationStmt><sourceDesc><biblStruct><analytic><title xml:lang="en" level="a">Contact resistance of focused ion beam deposited platinum and tungsten films to silicon</title><author><name sortKey="Demarco, Anthony J" sort="Demarco, Anthony J" uniqKey="Demarco A" first="Anthony J." last="Demarco">Anthony J. Demarco</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>University of Maryland Department of Electrical and Computer Engineering, University of Maryland, Rm 1202U, Energy Research Facility, College Park, Maryland 20742</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Maryland</region></placeName><wicri:cityArea>University of Maryland Department of Electrical and Computer Engineering, University of Maryland, Rm 1202U, Energy Research Facility, College Park</wicri:cityArea></affiliation></author><author><name sortKey="Melngailis, John" sort="Melngailis, John" uniqKey="Melngailis J" first="John" last="Melngailis">John Melngailis</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>University of Maryland Department of Electrical and Computer Engineering, University of Maryland, Rm 1202U, Energy Research Facility, College Park, Maryland 20742</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Maryland</region></placeName><wicri:cityArea>University of Maryland Department of Electrical and Computer Engineering, University of Maryland, Rm 1202U, Energy Research Facility, College Park</wicri:cityArea></affiliation></author></analytic><series><title level="j" type="main">Journal of vacuum science & technology. B. Microelectronics and nanometer structures. Processing, measurement and phenomena</title><title level="j" type="abbreviated">J. vac. sci. technol., B., Microelectron. nanometer struct. process. meas. phenom.</title><idno type="ISSN">1071-1023</idno><imprint><date when="2001-11">2001-11</date></imprint></series></biblStruct></sourceDesc><seriesStmt><title level="j" type="main">Journal of vacuum science & technology. B. Microelectronics and nanometer structures. Processing, measurement and phenomena</title><title level="j" type="abbreviated">J. vac. sci. technol., B., Microelectron. nanometer struct. process. meas. phenom.</title><idno type="ISSN">1071-1023</idno></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Contact resistance</term><term>Elemental semiconductors</term><term>Experimental study</term><term>Focused ion beam technology</term><term>Integrated circuit interconnections</term><term>Ion beam assisted deposition method</term><term>Ohmic contacts</term><term>Platinum</term><term>Semiconductor-metal boundaries</term><term>Silicon</term><term>Sintering</term><term>Tungsten</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>7340N</term><term>7340C</term><term>8115J</term><term>8540L</term><term>Etude expérimentale</term><term>Platine</term><term>Tungstène</term><term>Silicium</term><term>Interface métal semiconducteur</term><term>Semiconducteur élémentaire</term><term>Résistance contact</term><term>Technologie faisceau ion focalisé</term><term>Méthode IBAD</term><term>Interconnexion circuit intégré</term><term>Contact ohmique</term><term>Frittage</term></keywords><keywords scheme="Wicri" type="topic" xml:lang="fr"><term>Platine</term><term>Tungstène</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">Focused ion beam (FIB) techniques are currently being used in industry for circuit repair and rewiring in the prototyping stage. The ability to deposit a conductor directly onto silicon with a good electrical contact using the FIB methods would increase the utility of this technique in repair and circuit function diagnosis. In addition, FIB made contacts may be encountered in microelectromechanical devices (MEMS), and, when combined with FIB direct implantation, may permit local fabrication of transistors [e.g., bipolars and junction field-effect transistors (JFETs)] without conventional, planar techniques. The contact resistance of FIB-deposited platinum and tungsten onto variously doped silicon was investigated. FIB-metal contact to n<sup>+</sup> and p<sup>+</sup>Si was found to be ohmic after a sintering at 400°C for 20 min in H<sub>2</sub>N<sub>2</sub> forming gas. Individual contacts were found to vary widely in contact resistance, likely due to nonuniformity in the deposition process. Contacts to lightly doped Si were nonohmic. The contact resistance for Pt contacts to heavily doped Si was found to be on the order of 10<sup>-2</sup>Ωcm<sup>2</sup>, and the contact resistance for W contacts on the order of 10<sup>-3</sup>Ωcm<sup>2</sup>. It is believed that the sintering leads to formation of Pt<sub>2</sub>Si and PtSi silicides, which may interfere with the metal/semiconductor tunneling contact. Platinum silicides form around 300°C, at the metal to silicon interface for the platinum contacts. Tungsten silicide, WSi<sub>2</sub>, forms at 650°C and is not believed to play a part in the tungsten contact dynamics. © 2001 American Vacuum Society.</div> </front></TEI><affiliations><list><country><li>États-Unis</li></country><region><li>Maryland</li></region></list><tree><country name="États-Unis"><region name="Maryland"><name sortKey="Demarco, Anthony J" sort="Demarco, Anthony J" uniqKey="Demarco A" first="Anthony J." last="Demarco">Anthony J. Demarco</name></region><name sortKey="Melngailis, John" sort="Melngailis, John" uniqKey="Melngailis J" first="John" last="Melngailis">John Melngailis</name></country></tree></affiliations></record>Pour manipuler ce document sous Unix (Dilib)
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